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The junction temperature Tj determines the service life and reliability of semiconductors. This calculator gives you Tj from power dissipation, total thermal resistance and inlet or ambient temperature, and shows immediately whether your cooling is sufficient.
Every rise in operating temperature noticeably shortens the service life of a semiconductor. As a rule of thumb, a rise of just 10 Kelvin already halves the expected lifetime. As long as the junction temperature stays below the manufacturer limit, the component runs reliably. Exceed the limit and you risk performance loss, premature ageing and failure.
Optional. Enter the datasheet limit to see your safety margin directly.
The junction temperature results from the power dissipation, the total thermal resistance between junction and coolant, and the ambient or inlet temperature.
Tj = Pv · Rth + T0 The junction temperature is the sum of the heating from power dissipation and the starting temperature of the coolant.
Rth = Rth(J−C) + Rth(C−B) + Rth(B−H) + Rth(H−A) The total thermal resistance is the series connection of all transitions from the junction through case and thermal interface material to the heat sink.
Margin = Tj,max − Tj The difference from the datasheet limit shows how much safety margin your design provides.
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An IGBT dissipates 150 W. The total thermal resistance from junction to coolant is 0.25 K/W, and the coolant inlet temperature is 40 °C. The manufacturer allows a maximum junction temperature of 150 °C.
Pv = 150 W, Rth = 0.25 K/W, T0 = 40 °C Tj = 150 W · 0.25 K/W + 40 °C Tj = 37.5 K + 40 °C = 77.5 °C Margin = 150 °C − 77.5 °C = 72.5 K At 77.5 °C the junction temperature stays clearly below the limit. The design offers a comfortable margin of 72.5 K.
The maximum permitted junction temperature depends on the semiconductor type. The following reference values help with a first assessment. The manufacturer datasheet is always decisive.
| Component / technology | Typical Tj,max | Note |
|---|---|---|
| Silicon (Si) standard | 150 °C | Common for diodes and MOSFETs. |
| Silicon IGBT | 150 to 175 °C | Modern modules often rated up to 175 °C. |
| Silicon carbide (SiC) | 175 to 200 °C | Higher temperatures and switching frequencies possible. |
| Gallium nitride (GaN) | 150 to 175 °C | High power density in a small footprint. |
| LED (high power) | 125 to 150 °C | Luminous flux and lifetime drop as Tj rises. |
| Processors / logic | 100 to 125 °C | Throttling protects against overheating. |
Reference values for orientation. The binding limit is stated in the datasheet of the respective component.
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